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Advance Technical Information
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN360N15T2
RDS(on) trr
VDSS ID25
= =
150V 310A 4.0m 150ns
miniBLOC, SOT-227 E153432
S
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 175C TC = 25C
Maximum Ratings 150 150 20 30 310 200 900 100 TBD 20 1070 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W C C C C C V~ V~ Nm/lb.in. Nm/lb.in. g
G
S D G = Gate S = Source D = Drain
Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.
Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL 1mA t = 1 minute t = 1 second
300 260 2500 3000 1.5/13 1.3/11.5 30
Mounting Torque Terminal Connection Torque
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 60A, Note 1 TJ = 150C
Characteristic Values Min. Typ. Max. 150 2.5 5.0 200 V V nA
50 A 5 mA 4.0 m
Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications
DS100180(08/09)
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFN360N15T2
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 180A Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 100A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 140 230 47.5 3060 665 50 170 115 265 715 185 200 S nF pF pF ns ns ns ns nC nC nC 0.14 C/W C/W (M4 screws (4x) supplied) SOT-227B (IXFN) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 60A, VGS = 0V, Note 1 IF = 160A, VGS = 0V -di/dt = 100A/s VR = 60V 0.50 9.00 Characteristic Values Min. Typ. Max. 360 1440 1.2 A A V
150 ns C A
Note 1. Pulse test, t 300s; duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFN360N15T2
Fig. 1. Output Characteristics @ T J = 25C
350 300 250 VGS = 15V 10V 8V 7V 350 300 250 VGS = 10V 7V 6V
Fig. 2. Extended Output Characteristics @ T J = 25C
ID - Amperes
200 150 100 50 0 0.0 0.2 0.4 0.6 0.8
ID - Amperes
6V
200 150 100
5V
5V
50 4V 0 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 150C
350 300 250 VGS = 10V 8V 7V 3.0
Fig. 4. RDS(on) Normalized to ID = 180A Value vs. Junction Temperature
VGS = 10V 2.6 2.2 I D = 360A 1.8 1.4 1.0 0.6 0.2 I D = 180A
ID - Amperes
6V 200 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 4V 5V
R DS(on) - Normalized
-50
-25
0
25
50
75
100
125
150
175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 180A Value vs. Drain Current
3.4 3.0 VGS = 10V
220 200 180
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
R DS(on) - Normalized
2.6 2.2 1.8 1.4
TJ = 175C
160
ID - Amperes
TJ = 25C 0 50 100 150 200 250 300 350
140 120 100 80 60 40 20
1.0 0.6
0 -50 -25 0 25 50 75 100 125 150 175
ID - Amperes
TC - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFN360N15T2
Fig. 7. Input Admittance
200 180 160 140 TJ = 150C 25C - 40C 450 400 350 25C
Fig. 8. Transconductance
TJ = - 40C
120 100 80 60 40 20 0 2.5 3.0 3.5
g f s - Siemens
ID - Amperes
300 250 200 150 100 50 0 150C
4.0
4.5
5.0
5.5
0
20
40
60
80
100
120
140
160
180
200
220
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
350 300 250 10 9 8 7 VDS = 75V I D = 180A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
200 150 TJ = 150C 100 TJ = 25C 50 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VGS - Volts
6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000
1,000.0
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit 25s
Ciss
Capacitance - PicoFarads
100.0
External Lead Limit
100s
10,000 Coss
ID - Amperes
10.0
1ms
1,000
1.0 10ms TJ = 175C TC = 25C Single Pulse 0.1 100ms DC
Crss
f = 1 MHz
100 0 5 10 15 20 25 30 35 40
1
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_360N15T2 (9V)08-19-09
IXFN360N15T2
Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature
340 RG = 1 , VGS = 10V 300 VDS = 75V 260 300 RG = 1 , VGS = 10V VDS = 75V
Fig. 14. Resistive Turn-on Rise Time vs. Drain Current
t r - Nanoseconds
t r - Nanoseconds
260
I
D
= 100A
220
220
180
TJ = 25C TJ = 125C
180 I = 200A
140
140
D
100
100 25 35 45 55 65 75 85 95 105 115 125
60 40 60 80 100 120 140 160 180 200
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance
700 600 500 400 300 200 100 0 1 2 3 4 5 6 7 8 9 10 210 700 600 500
Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature
220
tr
VDS = 75V
td(on) - - - I D = 200A
TJ = 125C, VGS = 10V
180
tf
VDS = 75V
td(off) - - - -
RG = 1, VGS = 10V
200 180 160
t d(on) - Nanoseconds
t r - Nanoseconds
t f - Nanoseconds
150 120 90 60 30 0
t d(off) - Nanoseconds
400 I D = 200A 300 200 100 0 25 35 45 55 65 75 85 95 105 115 I D = 100A
140 120 100 80 125
I D = 100A
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs. Drain Current
700 600 500 400 300 200 TJ = 25C 100 0 40 60 80 100 120 140 160 180 120 100 200 240 900 800 700
Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance
900
tf
VDS = 75V
td(off) - - - -
RG = 1, VGS = 10V
220 200 180 160 140
tf
VDS = 75V
td(off) - - - -
800 700
TJ = 125C, VGS = 10V
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f - Nanoseconds
t f - Nanoseconds
600 500 400 300 200 100 1 2 3
I D = 200A, 100A
600 500 400 300 200 100
TJ = 125C
4
5
6
7
8
9
10
ID - Amperes
RG - Ohms
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFN360N15T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximium Transient Thermal Impedance
0.200 0.100
.sadgsfgsf
Z(th)JC - C / W
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_360N15T2 (9V)08-19-09

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